品牌 | Logo | 应用领域 |
RHOMBUS-IND | 变压器 | |
页数 | 文件大小 | 规格书 |
1页 | 39K | |
描述 | ||
Wideband RF Impedance Matching Transformers |
生命周期: | Active | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.63 |
Is Samacsys: | N | 其他特性: | IMPEDANCE RATIO IS 1:2CT |
最大截止频率: | 80 MHz | 最小截止频率: | 0.05 MHz |
高度: | 5.21 mm | 插入损耗: | -3 dB |
长度: | 8 mm | 安装特点: | THROUGH HOLE MOUNTED |
最高工作温度: | 70 °C | 最低工作温度: | |
物理尺寸: | 8mm X 7.24mm X 5.21mm | 初级电感: | 80 µH |
表面贴装: | NO | 变压器类型: | RF TRANSFORMER |
匝数比 (Np:Ns): | 1:1.414CT | 宽度: | 7.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
T-12009 | RHOMBUS-IND |
获取价格 |
Wideband RF Impedance Matching Transformers | |
T1200EA45E | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 2132A I(C), 4500V V(BR)CES, N-Channel, | |
T1200EB45E | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES, N-Channel, | |
T1200N | ETC |
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PHASE CONTROL THYRISTORS | |
T1200N1800TOC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1200000mA I(T), 1800V V(DRM), | |
T1200TA25A | IXYS |
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Insulated Gate Bipolar Transistor, 1141A I(C), 2500V V(BR)CES, N-Channel, TA, 4 PIN | |
T1200TB25A | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, | |
T1200TD25A | IXYS |
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Insulated Gate Bipolar Transistor, | |
T1201 | MPSIND |
获取价格 |
ISDN/T1/E1 TRANSFORMER | |
T-12010 | RHOMBUS-IND |
获取价格 |
Wideband RF Impedance Matching Transformers |