Datasheet > T1200TD25A

T1200TD25A

更新时间： 2024-11-28 19:55:43

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
9页	814K
描述
Insulated Gate Bipolar Transistor,

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T1200TD25A 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

T1200TD25A 数据手册

Date:- 16 Dec, 2014

Data Sheet Issue:- A1

Advance data

Insulated Gate Bi-Polar Transistor

Type T1200TD25A

Absolute Maximum Ratings

MAXIMUM

VOLTAGE RATINGS

LIMITS

UNITS

V_CES

Collector – emitter voltage

2500

1250

±20

V_{DC link}

V_GES

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_C

DC collector current, IGBT

1200

2400

I_CRM

I_F(DC)

I_FRM

I_FSM

I_FSM2

P_MAX

(di/dt)_cr

T_j

Repetitive peak collector current, t_p=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, t_p=1ms, Diode

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, Diode (Note 4)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

1200

2400

7240

7960

5.9

A/µs

°C

2500

Operating temperature range.

-40 to +125

T_stg

Storage temperature range.

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 375nH.

4) Half-sinewave, 125°C T_jinitial.

Provisional Data Sheet T1200TD25A Issue A1

Page 1 of 8

December, 2014

12 3 4 5 6 7...9

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