Datasheet > T1205

T1205

更新时间： 2024-11-29 11:16:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		变压器可控硅
页数	文件大小	规格书
7页	113K
描述
12A - 600V - D2PAK封装逻辑电平三端双向可控硅

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数据手册

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T1205 数据手册

BTA/BTB12 and T12 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD

12A TRIACS

MAIN FEATURES:

Symbol

Value

Unit

T(RMS)

600 and 800

DRM RRM

5 to 50

GT (Q )

DESCRIPTION

Available either in through-hole or surface-mount

packages, the BTA/BTB12 and T12 triac series is

suitable for general purpose AC switching. They

can be used as an ON/OFF function in

applications such as static relays, heating

regulation, induction motor starting circuits... or for

phase control operation in light dimmers, motor

speed controllers,...

D PAK

(T12-G)

The snubberless versions (BTA/BTB...W and T12

series) are specially recommended for use on

inductive loads, thanks to their high commutation

performances. Logic level versions are designed

to interface directly with low power drivers such as

microcontrollers. By using an internal ceramic

pad, the BTA series provides voltage insulated tab

(rated at 2500V RMS) complying with UL

standards (File ref.: E81734)

TO-220AB Insulated

(BTA12)

TO-220AB

(BTB12)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

RMS on-state current (full sine wave)

Tc = 105°C

D PAK/TO-220AB

TO-220AB Ins.

F = 50 Hz

T(RMS)

Tc = 90°C

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

120

126

TSM

F = 60 Hz

t = 16.7 ms

tp = 10 ms

A s

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

F = 120 Hz

Tj = 125°C

Tj = 25°C

A/µs

= 2 x I , tr ≤ 100 ns

Non repetitive surge peak off-state

voltage

DRM RRM

+ 100

tp = 10 ms

tp = 20 µs

DSM RSM

Peak gate current

Tj = 125°C

Average gate power dissipation

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

September 2002 - Ed: 6A

1/7

12 3 4 5 6 7

中文翻译

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