Datasheet > T1200EB45E

T1200EB45E

更新时间： 2024-01-05 06:27:10

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	307K
描述
Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES, N-Channel,

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T1200EB45E 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

T1200EB45E 数据手册

Date:- 19 Oct, 2009

Data Sheet Issue:- 1

Provisional Data

Insulated Gate Bi-Polar Transistor

Type T1200EB45E

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_CES

Collector – emitter voltage

4500

2800

±20

V_{DC link}

V_GES

Permanent DC voltage for 100 FIT failure rate

Peak gate – emitter voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_C(DC)

I_CRM

I_ECO

P_MAX

T_{j op}

T_stg

Continuous DC collector current, IGBT

Repetitive peak collector current, t_p=1ms, IGBT

Maximum reverse emitter current, t_p=100µs, (note 2 & 3)

Maximum power dissipation, IGBT (note 2)

Operating temperature range

1200

2400

1200

12.5

°C

-40 to +125

Storage temperature range

Notes: -

1) Unless otherwise indicated T_j= 125ºC

2) T_sink= 25°C, double side cooled

3) The use of an anti-parallel diode is recommended

Provisional Data Sheet T1200EB45E Issue 1

Page 1 of 6

October, 2009

12 3 4 5 6

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