Datasheet > T1200EB45E

T1200EB45E

更新时间： 2024-01-23 17:01:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	307K
描述
Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES, N-Channel,

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技术参数
数据手册

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T1200EB45E 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

T1200EB45E 数据手册

WESTCODE An IXYS Company

Insulated Gate Bi-polar Transistor Type T1200EB45E

Figure 5 – Typical turn-off delay time vs. gate

resistance

Figure 6 – Typical turn-on energy vs. collector

current

3.5

6000

T1200EB45E

AD Issue 1

T1200EB45E

AD Issue 1

R_G(on)=3.3Ω

C_GE=133nF

V_GE=±15V

T_j=125°C

_CE=2800V

V_GE=±15V

C_GE=133nF

T_j=125°C

V_CE=3000V

5000

I_C=1200A

I_C=800A

2.5

4000

V_CE=2000V

3000

V_CE=1000V

2000

1.5

1000

500

1000

1500

Gate resistance - R_G(off)(Ω)

Collector current - I_C(A)

Figure 8 – Typical turn-off energy vs. collector

current

Figure 7 – Typical turn-on energy vs. di/dt

6000

15000

T1200EB45E

AD Issue 1

V_CE=2800V

AD Issue 1

R_G(on)=3.3Ω

_GE=133nF

_GE=±15V

T_j=125°C

_GE=±15V

T_j=125°C

5000

4000

3000

2000

1000

I_C=1200A

V_CE=3000V

V_CE=2000V

V_CE=1000V

10000

5000

I_C=800A

500

1000

1500

1000

2000

3000

Collector current - I_C(A)

Commutation rate - di/dt (A/µs)

Provisional Data Sheet T1200EB45E Issue 1

Page 4 of 6

October, 2009

1 2 345 6

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