Datasheet > SW20N60

SW20N60

更新时间： 2024-11-08 08:57:43

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	711K
描述
N-channel Power MOSFET

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SW20N60 数据手册

SAMWIN

SW20N60

N-channel Power MOSFET

BV_DSS: 600V

TO-3P

Features

I_D

: 20A*

■ High ruggedness MOSFET

■ R_DS(ON)(Max 0.3Ω)@V_GS=10V

■ Gate Charge (Max 80 nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 0.3ohm

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. This power MOSFET is usually used at high efficient DC to

DC converter block, high efficiency switch mode power supplies, power factor

correction, electronic lamp ballast based on half bridge.

Order Codes

Item

Sales Type

Marking

Package

TO-3P

Packaging

TUBE

SW W 20N60

SW20N60

Absolute maximum ratings

Symbol

Parameter

SW20N60

Unit

V_DSS

I_D

Drain to Source Voltage

600

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

± 30

1100

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

(note 2)

(note 1)

(note 3)

E_AR

dv/dt

4.5

V/ns

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

300

2.38

P_D

T_STG, T_J

T_L

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 175

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

^oC

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

0.24

Max.

0.42

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

Thermal resistance, Junction to ambient

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

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