Datasheet > SW20N60K

SW20N60K

更新时间： 2024-11-18 17:01:11

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	694K
描述
TO-220F

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中文翻译

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SW20N60K 数据手册

SW20N60K

N-channel Enhanced mode TO-220F MOSFET

Features

TO-220F

BV_DSS: 600V

I_D: 20A

 High ruggedness

 Low R_DS(ON)(Typ 0.15Ω)@V_GS=10V

 Low Gate Charge (Typ 60nC)

 Improved dv/dt Capability

 100% Avalanche Tested

_DS(ON): 0.15Ω

 Application:LED,Charger,PC Power

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW F 20N60K

SW20N60K

TO-220F

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

600

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

20*

I_D

12.6*

I_DM

V_GS

(note 1)

Gate to source voltage

±30

500

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

(note 1)

V/ns

E_AR

dv/dt

MOSFET dv/dt ruggedness (@VDS=0~400V)

Peak diode recovery dv/dt

(note 3)

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

35.9

0.3

P_D

_STG, T_J

T_L

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Value

3.48

Unit

^oC/W

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

R_thja

47.3

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

中文翻译

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