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SW20N65K2 PDF预览

SW20N65K2

更新时间: 2024-11-20 17:01:39
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 663K
描述
TO-220F

SW20N65K2 数据手册

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SW20N65K2  
N-channel Enhanced mode TO-220F MOSFET  
BVDSS : 650V  
ID : 20A  
TO-220F  
Features  
High ruggedness  
RDS(ON) : 0.15Ω  
Low RDS(ON) (Typ 0.15)@VGS=10V  
Low Gate Charge (Typ 37nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
2
1
1
2
3
Application: Charger, LED, PC Power  
1. Gate 2. Drain 3. Source  
3
General Description  
This power MOSFET is produced with super junction advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
Sales Type  
Marking  
Package  
TO-220F  
Packaging  
SW F 20N65K2  
SW20N65K2  
TUBE  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
650  
Unit  
V
VDSS  
Drain to source voltage  
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
20*  
A
ID  
13*  
A
IDM  
VGS  
(note 1)  
60  
A
Gate to source voltage  
± 30  
440  
V
EAS  
Single pulsed avalanche energy  
Repetitive avalanche energy  
(note 2)  
(note 1)  
mJ  
mJ  
V/ns  
V/ns  
W
EAR  
44  
dv/dt  
dv/dt  
MOSFET dv/dt ruggedness (@VDS=0~400V)  
Peak diode recovery dv/dt  
30  
(note 3)  
20  
Total power dissipation (@TC=25oC)  
Derating factor above 25oC  
40.3  
0.3  
PD  
W/oC  
oC  
TSTG, TJ  
TL  
Operating junction temperature & storage temperature  
-55 ~ + 150  
Maximum lead temperature for soldering  
purpose, 1/8 from case for 5 seconds.  
300  
oC  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Symbol  
Parameter  
Value  
Unit  
Rthjc  
Rthja  
Thermal resistance, Junction to case  
Thermal resistance, Junction to ambient  
3.1  
oC/W  
oC/W  
46.7  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Aug. 2018. Rev. 2.0  
1/6  

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