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SW20N65K PDF预览

SW20N65K

更新时间: 2024-09-22 17:02:11
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
7页 1121K
描述
TO-220,TO-220F,TO-3P,TO-262N

SW20N65K 数据手册

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SW20N65K  
N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET  
TO-220F  
TO-3P  
Features  
TO-262N  
TO-220  
BVDSS : 650V  
ID : 20A  
High ruggedness  
Low RDS(ON) (Typ 0.16)@VGS=10V  
Low Gate Charge (Typ 60nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
R
DS(ON) : 0.16 Ω  
2
1
1
1
2
1
2
2
2
Application:LED, Charger, PC Power  
3
3
3
3
1. Gate 2. Drain 3. Source  
1
General Description  
3
This power MOSFET is produced with advanced super junction technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
Sales Type  
SW P 20N65K  
SW F 20N65K  
SW W 20N65K  
SW J 20N65K  
Marking  
Package  
TO-220  
TO-220F  
TO-3P  
Packaging  
1
2
3
4
SW20N65K  
SW20N65K  
SW20N65K  
SW20N65K  
TUBE  
TUBE  
TUBE  
TUBE  
TO-262N  
Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
TO-220 TO-220F TO-3P TO-262N  
VDSS  
ID  
Drain to source voltage  
650  
20*  
12.6*  
60  
V
A
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
A
IDM  
VGS  
(note 1)  
A
Gate to source voltage  
±30  
500  
24  
V
EAS  
Single pulsed avalanche energy  
Repetitive avalanche energy  
(note 2)  
(note 1)  
mJ  
mJ  
V/ns  
V/ns  
W
EAR  
dv/dt  
dv/dt  
MOSFET dv/dt ruggedness (@VDS=0~400V)  
Peak diode recovery dv/dt  
30  
(note 3)  
20  
Total power dissipation (@TC=25oC)  
Derating factor above 25oC  
297.6  
2.4  
35.9  
0.3  
403.2  
3.2  
277.8  
2.2  
PD  
W/oC  
oC  
T
STG, TJ Operating junction temperature & storage temperature  
-55 ~ + 150  
Maximum lead temperature for soldering  
TL  
300  
oC  
purpose, 1/8 from case for 5 seconds.  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Value  
Symbol  
Parameter  
Unit  
TO-220 TO-220F TO-3P TO-262N  
Rthjc  
Rthja  
Thermal resistance, Junction to case  
Thermal resistance, Junction to ambient  
0.42  
55.7  
3.48  
47.3  
0.31  
41.6  
0.45  
65  
oC/W  
oC/W  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Apr. 2019. Rev. 4.0  
1/7  

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