Datasheet > SW20N65D

SW20N65D

更新时间： 2024-09-22 17:01:31

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	716K
描述
TO-220F,TO-247

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SW20N65D 数据手册

SW20N65D

N-channel Enhanced mode TO-220F/TO-247 MOSFET

TO-220F

BV_DSS: 650V

I_D: 20A

TO-247

Features

 High ruggedness

_DS(ON): 0.31Ω

 Low R_DS(ON)(Typ 0.31Ω)@V_GS=10V

 Low Gate Charge (Typ 88nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charger, Adaptor, LED

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW F 20N65D

SW T 20N65D

Marking

Package

Packaging

SW20N65D

TO-220F

TO-247

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220F

TO-247

V_DSS

Drain to source voltage

650

20*

12.6*

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_D

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

820

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

312.5

2.5

P_D

0.23

W/^oC

^oC

T_STG, T_J

T_L

Operating junction temperature & storage temperature

-55 ~ + 150

300

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220F

TO-247

0.4

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

4.3

^oC/W

33.5

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

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