5秒后页面跳转
SUM85N03-06P-E3 PDF预览

SUM85N03-06P-E3

更新时间: 2024-11-25 06:14:59
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 90K
描述
N-Channel 30-V (D-S) 175C MOSFET

SUM85N03-06P-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):85 A最大漏极电流 (ID):85 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SUM85N03-06P-E3 数据手册

 浏览型号SUM85N03-06P-E3的Datasheet PDF文件第2页浏览型号SUM85N03-06P-E3的Datasheet PDF文件第3页浏览型号SUM85N03-06P-E3的Datasheet PDF文件第4页浏览型号SUM85N03-06P-E3的Datasheet PDF文件第5页浏览型号SUM85N03-06P-E3的Datasheet PDF文件第6页 
SUM85N03-06P  
Vishay Siliconix  
N-Channel 30-V (D-S) 175_C MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D 175_C Junction Temperature  
D PWM Optimized for High Efficiency  
D New Package with Low Thermal Resistance  
D 100% Rg Tested  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.006 @ V = 10 V  
85  
77  
GS  
30  
0.009 @ V = 4.5 V  
GS  
APPLICATIONS  
D Buck Converter  
D
High Side  
Low Side  
TO-263  
D Synchronous Rectifier  
Secondary Rectifier  
G
G
D S  
Top View  
S
N-Channel MOSFET  
Ordering Information: SUM85N03-06P  
SUM85N03-06P-E3 (Lead Free)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
GS  
V
"20  
85  
T
= 25_C  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
= 100_C  
67  
C
A
Pulsed Drain Current  
Avalanche Current  
I
200  
45  
DM  
I
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
101  
mJ  
b
T
T
= 25_C  
100  
C
a
Maximum Power Dissipation  
P
W
D
c
= 25_C  
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
PCB Mount  
40  
62.5  
1.5  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
R
thJC  
Free Air  
_C/W  
Notes  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71903  
S-32523—Rev. B, 08-Dec-03  
www.vishay.com  
1

SUM85N03-06P-E3 替代型号

型号 品牌 替代类型 描述 数据表
STB85NF3LLT4 STMICROELECTRONICS

功能相似

N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET
STB85NF3LL STMICROELECTRONICS

功能相似

N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE

与SUM85N03-06P-E3相关器件

型号 品牌 获取价格 描述 数据表
SUM85N03-07P VISHAY

获取价格

N-Channel 30-V (D-S) 175C MOSFET
SUM85N03-07P-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM85N03-08P VISHAY

获取价格

N-Channel Reduced Qg, Fast Switching MOSFET
SUM85N03-08P-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM85N15-19 VISHAY

获取价格

N-Channel 150-V (D-S) 175C MOSFET
SUM85N15-19-E3 VISHAY

获取价格

TRANSISTOR 85 A, 150 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN,
SUM865070 CELDUC

获取价格

Power Solid State Contactor
SUM90100E VISHAY

获取价格

N-Channel 200 V (D-S) MOSFET
SUM90140E VISHAY

获取价格

N-Channel 200 V (D-S) 175 °C MOSFET
SUM90140E-GE3 VISHAY

获取价格

MOSFET N-CH 200V 90A D2PAK