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SUD40N08-16-T4-E3 PDF预览

SUD40N08-16-T4-E3

更新时间: 2024-11-23 15:53:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 66K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SUD40N08-16-T4-E3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.74配置:Single
最大漏极电流 (Abs) (ID):40 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):136 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

SUD40N08-16-T4-E3 数据手册

 浏览型号SUD40N08-16-T4-E3的Datasheet PDF文件第2页浏览型号SUD40N08-16-T4-E3的Datasheet PDF文件第3页浏览型号SUD40N08-16-T4-E3的Datasheet PDF文件第4页浏览型号SUD40N08-16-T4-E3的Datasheet PDF文件第5页 
SUD40N08-16  
Vishay Siliconix  
N-Channel 80-V (D-S) 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Maximum Junction Temperature  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
80  
0.016 @ V = 10 V  
GS  
40  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Ordering Information:  
S
SUD40N08-16  
SUD40N08-16—E3 (Lead Free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
80  
"20  
40  
DS  
GS  
V
V
T
= 25_C  
= 125_C  
C
b
Continuous Drain Current (T = 175_C)  
I
D
J
T
30  
C
Pulsed Drain Current  
I
60  
A
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
40  
S
I
40  
AR  
Repetitive Avalanche Energy (Duty Cycle v 1%)  
L = 0.1 mH  
E
AR  
80  
mJ  
b
T
= 25_C  
= 25_C  
136  
C
Maximum Power Dissipation  
P
D
W
a
3
T
A
Operating Junction and Storage Temperature Range  
T , T  
55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
15  
40  
18  
50  
a
Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
_C/W  
Junction-to-Case  
0.85  
1.1  
Notes  
a. Surface Mounted on 1” x1” FR4 Board.  
b. See SOA curve for voltage derating.  
Document Number: 71323  
S-40272—Rev. C, 23-Feb-04  
www.vishay.com  
1

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