Datasheet > SUD40N10

SUD40N10

更新时间： 2024-11-26 11:59:35

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
7页	605K
描述
N-Channel 100 V (D-S) 175 Â°C MOSFET

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数据手册

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SUD40N10 数据手册

SUD40N10-25

N-Channel

100 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

175 °C Maximum Junction Temperature

100 % R_gTested

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Available

0.025 at V_GS= 10 V

0.028 at V_GS= 4.5 V

RoHS*

100

COMPLIANT

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD40N10-25

N-Channel MOSFET

SUD40N10-25-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)^b

I_D

T_C= 125 °C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

I_AS

E_AS

Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %)

L = 0.1 mH

T_C= 25 °C

T_A= 25 °C

136^b

3^a

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Junction-to-Ambient^a

R_thJA

Steady State

°C/W

R_thJC

Junction-to-Case

0.85

1.1

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See SOA curve for voltage derating.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

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