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SUD40N10-25 PDF预览

SUD40N10-25

更新时间: 2024-11-22 21:55:35
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
4页 61K
描述
N-Channel 100-V (D-S) 175`C MOSFET

SUD40N10-25 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.22Is Samacsys:N
雪崩能效等级(Eas):80 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):40 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):33 W
最大脉冲漏极电流 (IDM):70 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SUD40N10-25 数据手册

 浏览型号SUD40N10-25的Datasheet PDF文件第2页浏览型号SUD40N10-25的Datasheet PDF文件第3页浏览型号SUD40N10-25的Datasheet PDF文件第4页 
                                                                                                                           
_C/W  
SUD40N10-25  
Vishay Siliconix  
New Product  
N-Channel 100-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.025 @ V = 10 V  
40  
38  
GS  
100  
0.028 @ V = 4.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD40N10-25  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
"20  
40  
DS  
GS  
V
V
T
= 25_C  
= 125_C  
C
b
Continuous Drain Current (T = 175_C)  
I
D
J
T
C
23  
Pulsed Drain Current  
I
70  
A
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
40  
S
I
40  
AR  
Repetitive Avalanche Energy (Duty Cycle v 1%)  
L = 0.1 mH  
E
80  
mJ  
W
AR  
b
T
C
= 25_C  
= 25_C  
33  
Maximum Power Dissipation  
P
D
a
T
3
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
15  
40  
18  
50  
a
Junction-to-Ambient  
R
thJA  
thJC  
Steady State  
Junction-to-Case  
R
1.2  
1.5  
Notes  
a. Surface Mounted on 1” x1” FR4 Board.  
b. See SOA curve for voltage derating.  
Document Number: 71140  
S–00171—Rev. A, 14-Feb-00  
www.vishay.com S FaxBack 408-970-5600  
2-1  

SUD40N10-25 替代型号

型号 品牌 替代类型 描述 数据表
SUD40N10-25-E3 VISHAY

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