是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.22 | Is Samacsys: | N |
雪崩能效等级(Eas): | 80 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 40 A | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 33 W |
最大脉冲漏极电流 (IDM): | 70 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SUD40N10-25-E3 | VISHAY |
类似代替 |
TRANSISTOR 40 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, TO-252 | |
RFD3055SM | FAIRCHILD |
功能相似 |
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs | |
SUB40N06-25L | VISHAY |
功能相似 |
N-Channel 60-V (D-S), 175 Degrees Celcious MOSFET, Logic Level |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SUD40N10-25-E3 | VISHAY |
获取价格 |
TRANSISTOR 40 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, TO-252 | |
SUD42N03-3M9P | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET | |
SUD42N03-3M9P-GE3 | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET | |
SUD45N05-20L | FREESCALE |
获取价格 |
N-Channel 50 V (D-S) 175 °C MOSFET | |
SUD45N05-20L | VISHAY |
获取价格 |
N-Channel 50-V (D-S), 175C MOSFET, Logic Level | |
SUD45N05-20L-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUD45P | VISHAY |
获取价格 |
Transistor | |
SUD45P03-09 | FREESCALE |
获取价格 |
P-Channel 30 V (D-S) MOSFET | |
SUD45P03-09-GE3 | VISHAY |
获取价格 |
MOSFET P-CH 30V 45A DPAK | |
SUD45P03-10 | FREESCALE |
获取价格 |
P-Channel 30-V (D-S), MOSFET |