Datasheet > SUD50M02-12P

SUD50M02-12P

更新时间： 2024-11-26 08:58:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	45K
描述
N-Channel 20-V (D-S) 175-LC MOSFET

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数据手册

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SUD50M02-12P 数据手册

SUD50N02-12P

Vishay Siliconix

N-Channel 20-V (D-S) 175_C MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

V_DS(V)

r_DS(on)(W)

I_D(A)^a

D PWM Optimized for High Efficiency

APPLICATIONS

0.012 @ V = 10 V

0.026 @ V = 4.5 V

D High-Side Synchronous Buck DC/DC

Conversion

- Desktop

- Server

TO-252

Drain Connected to Tab

Top View

Order Number:

SUD50N02-12P

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

Continuous Drain Current

T = 100_C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

= 25_C

33.3

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Maximum Junction-to-Ambient

thJA

thJC

Steady State

_C/W

Maximum Junction-to-Case

3.7

4.5

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

b. Limited by package

c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A.

Document Number: 72095

S-31269—Rev. B, 16-Jun-03

www.vishay.com

12 3 4

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