Datasheet > SUD42N03-3M9P

SUD42N03-3M9P

更新时间： 2024-11-26 08:58:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	133K
描述
N-Channel 30 V (D-S) MOSFET

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SUD42N03-3M9P 数据手册

SUD42N03-3m9P

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)

107^d

103^d

Q_g(Typ.)

Definition

0.0039 at V_GS= 10 V

0.0045 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converters

- Synchronous Buck Low Side

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD42N03-3m9P-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C (Silicon Limited)

_C= 70 °C (Silicon Limited)

107^d

85^d

Continuous Drain Current

I_D

T_C= 25 °C (Package Limited)

Pulsed Drain Current (t = 300 µs)

Avalanche Current

I_DM

I_AS

120

Single Avalanche Energy^a

L = 0.1 mH

T_C= 25 °C

E_AS

101

73.5^b

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

2.5

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

R_thJA

Limit

Unit

°C/W

Junction-to-Case (Drain)

R_thJC

1.7

Notes:

a. Duty cycle  1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR-4 material).

d. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42 A.

Document Number: 66824

S10-2006-Rev. A, 06-Sep-10

www.vishay.com

12 3 4 5 6 7 8

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