Datasheet > STTH1R04-Y

STTH1R04-Y

更新时间： 2024-11-14 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
12页	352K
描述
汽车级400 V、1 A超高速二极管

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STTH1R04-Y 数据手册

STTH1R04-Y

Automotive ultrafast recovery diode

Datasheet - production data

Description

This device that uses ST's new 400 V planar Pt

doping technology, is specially suited for

switching mode base drive and transistor circuits.

Packaged in SMB and SMA, it is intended for use

in low voltage, high frequency inverters,

freewheeling and polarity protection in

automotive applications.

Table 1: Device summary

SMB

SMA

Symbol

I_F(AV)

Value

1 A

V_RRM

400 V

175 °C

0.9 V

14 ns

Features

T_j(max.)

V_F(typ.)

t_rr(typ.)



AEC-Q101 qualified

Negligible switching losses

Low forward and reverse recovery times

High junction temperature

ECOPACK®2 compliant component

March 2017

DocID024449 Rev 2

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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