Datasheet > STTH1R06_07

STTH1R06_07

更新时间： 2024-09-25 03:40:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压
页数	文件大小	规格书
9页	117K
描述
Turbo 2 ultrafast high voltage rectifier

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中文翻译

获取价格

数据手册

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STTH1R06_07 数据手册

STTH1R06

Turbo 2 ultrafast high voltage rectifier

Table 1.

Main product characteristics

I_F(AV)

1 A

V_RRM

I_R(max)

T_j

600 V

75 µA

175° C

1.0 V

25 ns

DO-41

STTH1R06

SMA

V_F(typ)

t_rr(max)

STTH1R06A

Features and benefits

■ Ultrafast switching

■ Low reverse recovery current

■ Low thermal resistance

SMB

STTH1R06U

■ Reduces switching and conduction losses

Table 2.

Order codes

Description

Part number

Marking

The STTH1R06, which uses ST Turbo 2 600 V

technology, is especially suited as a boost diode

in power factor correction circuitry.

STTH1R06

STTH1R06RL

STTH1R06A

STTH1R06U

STTH1R06

HR6

The device is also intended for use as a free

wheeling diode in power supplies and other power

switching applications.

BR6

Table 3.

Symbol

Absolute ratings (limiting values)

Parameter

Value

Unit

V_RRM

Repetitive peak reverse voltage

600

DO-41

I_F(RMS)RMS forward voltage

SMA / SMB

DO-41

Tc = 100° C δ = 0.5

Tc = 125° C δ = 0.5

Tc = 135° C δ = 0.5

I_F(AV)

Average forward current

SMA

SMB

DO-41

I_FSM

Surge non repetitive forward current

Storage temperature range

tp = 10ms sinusoidal

SMA / SMB

T_stg

T_j

-65 to + 175

175

° C

Maximum operating junction temperature

July 2007

Rev 4

1/9

www.st.com

12 3 4 5 6 7...9

中文翻译

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