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STPS2545CFP PDF预览

STPS2545CFP

更新时间: 2024-11-14 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管局域网
页数 文件大小 规格书
6页 105K
描述
POWER SCHOTTKY RECTIFIER

STPS2545CFP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220FP包装说明:TO-220FPAB, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:POWER
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.57 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:12.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS2545CFP 数据手册

 浏览型号STPS2545CFP的Datasheet PDF文件第2页浏览型号STPS2545CFP的Datasheet PDF文件第3页浏览型号STPS2545CFP的Datasheet PDF文件第4页浏览型号STPS2545CFP的Datasheet PDF文件第5页浏览型号STPS2545CFP的Datasheet PDF文件第6页 
STPS2545CT/CG/CFP  
®
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
K
IF(AV)  
VRRM  
2 x 12.5 A  
A2  
45 V  
Tj (max)  
VF (max)  
175 °C  
0.57 V  
FEATURES AND BENEFITS  
A2  
K
K
VERY SMALL CONDUCTION LOSSES  
A1  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW THERMAL RESISTANCE  
TO-220AB  
A2  
STPS2545CT  
A1  
AVALANCHE CAPABILITY SPECIFIED  
D2PAK  
STPS2545CG  
DESCRIPTION  
Dual center tap Schottky rectifier suited for  
Switch Mode Power Supplies and high fre-  
quency DC to DC converters.  
A2  
K
A1  
This device is especially intended for use in low  
voltage, high frequency inverters, free wheeling  
and polarity protection applications.  
TO-220FPAB  
STPS2545CFP  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Value  
45  
Unit  
V
Repetitive peak reverse voltage  
RMS forward current  
IF(RMS)  
IF(AV)  
30  
A
Average forward  
current δ = 0.5  
TO-220AB  
D2PAK  
Tc = 160°C Per diode  
12.5  
A
TO-220FPAB  
Tc = 140°C Per device  
tp = 10 ms sinusoidal  
tp = 2 µs square F = 1kHz  
tp = 100 µs square  
25  
200  
1
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
Surge non repetitive forward current  
Repetitive peak reverse current  
A
A
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
2
A
tp = 1µs Tj = 25°C  
4800  
W
-65 to+175 °C  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
175  
°C  
dV/dt  
10000  
V/µs  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 2A  
1/6  

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