STPS20H100

更新时间： 2024-11-20 22:07:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压高电压电源
页数	文件大小	规格书
7页	90K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS20H100 数据手册

STPS20H100CT/CF/CG/CG-1

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 10 A

100 V

175°C

0.64 V

V_F(max)

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

HIGHJUNCTION TEMPERATURE CAPABILITY

GOODTRADE OFF BETWEENLEAKAGE CUR-

RENT AND FORWARD VOLTAGE DROP

LOW LEAKAGE CURRENT

AVALANCHE RATED

INSULATED PACKAGE: ISOWATT220AB

Insulating Voltage = 2000V DC

Capacitance = 45 pF

TO-220AB

STPS20H100CT

ISOWATT220AB

STPS20H100CF

DESCRIPTION

Dual center tap schottky rectifier designed for

high frequency miniature Switched Mode

Power Supplies such as adaptators and on

board DC/DC converters.

D²PAK

STPS20H100CG

I²PAK

STPS20H100CG-1

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

100

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)Average forward

TO-220AB

Tc = 160°C

per diode

per device

current δ = 0.5

D²PAK / I²PAK

ISOWATT220AB Tc = 145°C

I_FSM

I_RRM

I_RSM

T_stg

Surge non repetitive forward current tp = 10 ms sinusoidal

Repetitive peak reverse current tp = 2 µs square F = 1kHz

250

Non repetitive peak reverse current tp = 100 µs square

Storage temperature range

- 65 to + 175

175

°C

V/µs

Maximum operating junction temperature *

dV/dt Critical rate of rise of reverse voltage

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j − a)

May 2000 - Ed: 3C

1/7

12 3 4 5 6 7

中文翻译

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STPS20H100CF	STMICROELECTRONICS	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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STPS20H100CG-1	STMICROELECTRONICS	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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