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STPS20L15DPBF PDF预览

STPS20L15DPBF

更新时间: 2024-01-22 05:17:10
品牌 Logo 应用领域
威世 - VISHAY 二极管局域网
页数 文件大小 规格书
6页 110K
描述
Schottky Rectifier, 20 A

STPS20L15DPBF 数据手册

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STPS20L15D  
Vishay High Power Products  
Schottky Rectifier, 20 A  
FEATURES  
• 125 °C TJ operation (VR < 5 V)  
Base  
cathode  
• Center tap module  
• Optimized for OR-ing applications  
• Ultra low forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and long term  
reliability  
1
3
TO-220AC  
Cathode Anode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
The Schottky rectifier module has been optimized for ultra  
low forward voltage drop specifically for the OR-ing of  
parallel power supplies. The proprietary barrier technology  
allows for reliable operation up to 125 °C junction  
temperature. Typical applications are in parallel switching  
power supplies, converters, reverse battery protection, and  
redundant power subsystems.  
IF(AV)  
20 A  
15 V  
VR  
IRM  
600 mA at 100 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 µs sine  
700  
A
VF  
19 Apk, TJ = 125 °C (typical)  
Range  
0.25  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
TJ = 100 °C  
STPS20L15D  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
15  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle, TC = 85 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
20  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
700  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 6 mH  
330  
10  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Document Number: 93476  
Revision: 22-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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