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STPS20L25CG PDF预览

STPS20L25CG

更新时间: 2024-11-21 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管
页数 文件大小 规格书
5页 97K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS20L25CG 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-263包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.26
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.35 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:220 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:25 V
最大反向电流:400000 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

STPS20L25CG 数据手册

 浏览型号STPS20L25CG的Datasheet PDF文件第2页浏览型号STPS20L25CG的Datasheet PDF文件第3页浏览型号STPS20L25CG的Datasheet PDF文件第4页浏览型号STPS20L25CG的Datasheet PDF文件第5页 
STPS20L25CT/CG  
®
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 10 A  
25 V  
A1  
A2  
K
Tj (max)  
VF (max)  
150 °C  
0.35 V  
K
FEATURES AND BENEFITS  
VERY LOW FORWARD VOLTAGE DROP FOR  
LESS POWER DISSIPATION AND REDUCED  
HEATSINK  
OPTIMIZED CONDUCTION/REVERSE LOSSES  
TRADE-OFF WHICH MEANS THE HIGHEST  
EFFICIENCY IN THE APPLICATIONS  
A2  
A2  
A1  
K
A1  
TO-220AB  
D2PAK  
STPS20L25CG  
STPS20L25CT  
DESCRIPTION  
Dual center tap Schottky rectifier suited to  
Switched Mode Power Supplies and high  
frequency DC to DC converters.  
Packaged in TO-220AB and D2PAK, this device is  
especially intended for use as a rectifier at the  
secondary of 3.3V SMPS units.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
25  
Unit  
VRRM  
Repetitive peak reverse voltage  
V
A
A
IF(RMS) RMS forward current  
30  
IF(AV)  
Average forward current  
Tc = 145°C Per diode  
10  
20  
δ
= 0.5  
Per device  
IFSM  
IRRM  
IRSM  
Tstg  
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp=2 µs square F=1kHz  
tp = 100 µs square  
220  
A
A
1
3
A
°C  
°C  
- 65 to + 150  
150  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
µ
V/ s  
dV/dt  
10000  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(ja)  
June 1999 - Ed : 3A  
1/5  

STPS20L25CG 替代型号

型号 品牌 替代类型 描述 数据表
STPS20L25CG-TR STMICROELECTRONICS

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