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STPS20L45CF PDF预览

STPS20L45CF

更新时间: 2024-11-21 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管局域网
页数 文件大小 规格书
9页 147K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS20L45CF 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.43其他特性:FREE WHEELING DIODE
应用:POWER外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大非重复峰值正向电流:180 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS20L45CF 数据手册

 浏览型号STPS20L45CF的Datasheet PDF文件第2页浏览型号STPS20L45CF的Datasheet PDF文件第3页浏览型号STPS20L45CF的Datasheet PDF文件第4页浏览型号STPS20L45CF的Datasheet PDF文件第5页浏览型号STPS20L45CF的Datasheet PDF文件第6页浏览型号STPS20L45CF的Datasheet PDF文件第7页 
®
STPS20L45CF/CW/CT/CFP/CG  
LOW DROP POWER SCHOTTKY RECTIFIER  
A1  
K
MAJOR PRODUCTS CHARACTERISTICS  
K
IF(AV)  
VRRM  
2 x 10 A  
45 V  
A2  
A2  
A1  
D2PAK  
Tj (max)  
VF (max)  
150°C  
0.5 V  
STPS20L45CG  
FEATURES AND BENEFITS  
LOW FORWARD VOLTAGE DROP MEANING  
VERY SMALL CONDUCTION LOSSES  
LOW SWITCHING LOSSES ALLOWING HIGH  
FREQUENCY OPERATION  
A2  
K
A1  
A2  
K
A1  
TO-220AB  
STPS20L45CT  
INSULATED  
TO-220FPAB  
PACKAGE:  
ISOWATT220AB,  
TO-220FPAB  
Insulating voltage = 2000V DC  
Capacitance = 12pF  
STPS20L45CFP  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Dual center tap Schottky rectifiers designed for  
high frequency switched mode power supplies and  
DC to DC converters.  
A2  
A2  
K
K
A1  
A1  
These devices are intended for use in low voltage,  
high frequency inverters, free-wheeling and  
polarity protection applications.  
TO-247  
STPS20L45CW  
ISOWATT220AB  
STPS20L45CF  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
45  
Unit  
V
A
A
IF(RMS)  
IF(AV)  
30  
RMS forward current  
TO-220AB / D2PAK Tc = 135°C Per diode  
TO-247  
10  
20  
Average forward  
current  
δ = 0.5  
Tc = 115°C Per diode  
δ = 0.5 Per device  
Per device  
10  
20  
A
ISOWATT220AB  
TO-220FPAB  
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
180  
A
A
Surge non repetitive forward current  
Peak repetitive reverse current  
tp = 10 ms Sinusoidal  
tp=2 µs square F=1kHz  
tp = 100 µs square  
tp = 1µs Tj = 25°C  
1
2
A
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
4000  
W
- 65 to + 150  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 3C  
1/9  

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