Datasheet > STPS20L25CT_03

STPS20L25CT_03

更新时间： 2024-11-01 08:59:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	92K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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STPS20L25CT_03 数据手册

STPS20L25CT/CG

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 10 A

25 V

Tj (max)

V_F(max)

150 °C

0.35 V

FEATURES AND BENEFITS

VERY LOW FORWARD VOLTAGE DROP FOR

LESS POWER DISSIPATION AND REDUCED

HEATSINK

OPTIMIZED CONDUCTION/REVERSE LOSSES

TRADE-OFF WHICH MEANS THE HIGHEST

EFFICIENCY IN THE APPLICATIONS

AVALANCHE CAPABILITY SPECIFIED

TO-220AB

STPS20L25CT

D²PAK

STPS20L25CG

DESCRIPTION

Dual center tap Schottky rectifier suited to

Switched Mode Power Supplies and high

frequency DC to DC converters.

Packaged in TO-220AB and D²PAK, this device is

especially intended for use as a rectifier at the

secondary of 3.3V SMPS units.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

I_F(RMS)RMS forward current

I_F(AV)

Average forward current

Tc = 145°C Per diode

δ = 0.5

Per device

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

Surge non repetitive forward current tp = 10 ms Sinusoidal

220

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp=2 µs square F=1kHz

tp = 100 µs square

tp = 1µs Tj = 25°C

5300

- 65 to + 150

150

°C

V/µs

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

10000

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed : 4A

1/5

12 3 4 5

中文翻译

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