STPS20L40

更新时间： 2024-11-01 02:52:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
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8页	126K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS20L40 数据手册

STPS20L40CF/CW/CT/CFP

LOW DROP POWER SCHOTTKY RECTIFIER

MAJOR PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

2 x 10 A

40 V

Tj (max)

V_F(max)

150°C

0.5 V

FEATURES AND BENEFITS

■

LOW FORWARD VOLTAGE DROP MEANING

VERY SMALL CONDUCTION LOSSES

LOW DYNAMIC LOSSES AS A RESULT OF

THE SCHOTTKY BARRIER

TO-220AB

STPS20L40CT

TO-220FPAB

STPS20L40CFP

INSULATED

TO-220FPAB

PACKAGE:

ISOWATT220AB,

Insulating voltage = 200V DC

Capacitance = 12pF

■

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifiers designed for

high frequency switched mode power supplies and

DC to DC converters.

TO-247

STPS20L40CW

ISOWATT220AB

STPS20L40CF

These devices are intended for use in low voltage,

high frequency inverters, free-wheeling and

polarity protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

Unit

I_F(RMS)

I_F(AV)

RMS forward current

Average forward

current

TO-220AB

TO-247

Tc = 135°C Per diode

δ = 0.5

Per device

ISOWATT220AB Tc = 115°C Per diode

TO-220FPAB δ = 0.5 Per device

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

180

Surge non repetitive forward current

Peak repetitive reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms Sinusoidal

tp = 2 µs square F=1kHz

tp = 100 µs square

4000

tp = 1µs Tj = 25°C

- 65 to + 150

150

°C

V/µs

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

dPtot

10000

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 4B

1/8

12 3 4 5 6 7 8

中文翻译

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