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STPS20L40CF PDF预览

STPS20L40CF

更新时间: 2024-10-31 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管局域网
页数 文件大小 规格书
8页 126K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS20L40CF 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.73 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大非重复峰值正向电流:180 A元件数量:2
相数:1端子数量:3
最高工作温度:125 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS20L40CF 数据手册

 浏览型号STPS20L40CF的Datasheet PDF文件第2页浏览型号STPS20L40CF的Datasheet PDF文件第3页浏览型号STPS20L40CF的Datasheet PDF文件第4页浏览型号STPS20L40CF的Datasheet PDF文件第5页浏览型号STPS20L40CF的Datasheet PDF文件第6页浏览型号STPS20L40CF的Datasheet PDF文件第7页 
®
STPS20L40CF/CW/CT/CFP  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAJOR PRODUCTS CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 10 A  
40 V  
K
Tj (max)  
VF (max)  
150°C  
0.5 V  
FEATURES AND BENEFITS  
LOW FORWARD VOLTAGE DROP MEANING  
VERY SMALL CONDUCTION LOSSES  
LOW DYNAMIC LOSSES AS A RESULT OF  
THE SCHOTTKY BARRIER  
A2  
K
A2  
A1  
K
A1  
TO-220AB  
STPS20L40CT  
TO-220FPAB  
STPS20L40CFP  
INSULATED  
TO-220FPAB  
PACKAGE:  
ISOWATT220AB,  
Insulating voltage = 200V DC  
Capacitance = 12pF  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
A2  
A2  
K
Dual center tap Schottky rectifiers designed for  
high frequency switched mode power supplies and  
DC to DC converters.  
K
A1  
A1  
TO-247  
STPS20L40CW  
ISOWATT220AB  
STPS20L40CF  
These devices are intended for use in low voltage,  
high frequency inverters, free-wheeling and  
polarity protection applications.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
40  
Unit  
V
A
A
IF(RMS)  
IF(AV)  
30  
RMS forward current  
10  
20  
Average forward  
current  
TO-220AB  
TO-247  
Tc = 135°C Per diode  
δ = 0.5  
Per device  
10  
20  
A
ISOWATT220AB Tc = 115°C Per diode  
TO-220FPAB δ = 0.5 Per device  
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
180  
A
A
Surge non repetitive forward current  
Peak repetitive reverse current  
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp = 2 µs square F=1kHz  
tp = 100 µs square  
1
2
A
4000  
W
tp = 1µs Tj = 25°C  
- 65 to + 150  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
1
dV/dt  
dPtot  
10000  
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 4B  
1/8  

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