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STPS20L15GPBF_10 PDF预览

STPS20L15GPBF_10

更新时间: 2024-01-09 05:31:46
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 105K
描述
Schottky Rectifier, 20 A

STPS20L15GPBF_10 数据手册

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VS-STPS20L15GPbF  
Vishay High Power Products  
Schottky Rectifier, 20 A  
FEATURES  
• 125 °C TJ operation (VR < 5 V)  
• Center tap module  
Base  
cathode  
2
• Optimized for OR-ing applications  
• Ultralow forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical strength and  
moisture resistance  
3
1
D2PAK  
N/C  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
IF(AV)  
20 A  
15 V  
600 mA at 100 °C  
DESCRIPTION  
VR  
The Schottky rectifier module has been optimized for  
ultralow forward voltage drop specifically for the OR-ing  
of parallel power supplies. The proprietary barrier  
technology allows for reliable operation up to 125 °C  
junction temperature. Typical applications are in parallel  
switching power supplies, converters, reverse battery  
protection, and redundant power subsystems.  
IRM  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 μs sine  
700  
A
VF  
19 Apk, TJ = 125 °C (typical)  
Range  
0.25  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS VS-STPS20L15GPbF  
UNITS  
Maximum DC reverse voltage  
VR  
TJ = 100 °C  
15  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 85 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
20  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
700  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 6 mH  
330  
10  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Document Number: 94326  
Revision: 16-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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