Datasheet > STPS20L15D_03

STPS20L15D_03

更新时间： 2024-02-28 22:02:12

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
5页	92K
描述
LOW DROP OR-ing POWER SCHOTTKY DIODE

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中文翻译

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数据手册

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STPS20L15D_03 数据手册

STPS20L15D/G

LOW DROP OR-ing POWER SCHOTTKY DIODE

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

20 A

15 V

Tj (max)

V_F(max)

125°C

0.33 V

FEATURES AND BENEFITS

VERY LOW FORWARD VOLTAGE DROP FOR

LESS POWER DISSIPATION AND REDUCED

HEATSINK SIZE

REVERSE VOLTAGE SUITED TO OR-ing OF 3V,

5V and 12V RAILS

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

TO-220AC

STPS20L15D

D²PAK

STPS20L15G

Packaged in TO-220AC or D²PAK, this device is

especially intended for use as an OR-ing diode in

fault tolerant power supply equipments.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

I_F(RMS)RMS forward current

I_F(AV)

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

Average forward current

Tc = 115°C δ = 1

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms Sinusoidal

tp = 2 µs F = 1kHz

tp = 100 µs

310

tp = 1µs Tj = 25°C

13500

- 65 to + 150

125

°C

V/µs

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

dPtot

10000

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R_{th (j-c)}Junction to case

1.6

°C/W

July 2003 - Ed: 3B

1/5

12 3 4 5

中文翻译

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