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STPS20L15D-N3 PDF预览

STPS20L15D-N3

更新时间: 2024-02-17 22:27:38
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 160K
描述
Schottky Rectifier, 20 A

STPS20L15D-N3 数据手册

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VS-STPS20L15DPbF, VS-STPS20L15D-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 20 A  
FEATURES  
• 125 °C TJ operation (VR < 5 V)  
Base  
cathode  
• Optimized for OR-ing applications  
• Ultra low forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
1
3
• High  
purity,  
high  
temperature  
epoxy  
Cathode Anode  
TO-220AC  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according to JEDEC-JESD47  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
PRODUCT SUMMARY  
Package  
TO-220AC  
20 A  
IF(AV)  
VR  
15 V  
DESCRIPTION  
VF at IF  
See Electrical table  
600 mA at 100 °C  
125 °C  
The Schottky rectifier module has been optimized for ultra  
low forward voltage drop specifically for the OR-ing of  
parallel power supplies. The proprietary barrier technology  
allows for reliable operation up to 125 °C junction  
temperature. Typical applications are in parallel switching  
power supplies, converters, reverse battery protection, and  
redundant power subsystems.  
I
RM max.  
TJ max.  
Diode variation  
EAS  
Single die  
10 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 μs sine  
700  
A
VF  
19 Apk, TJ = 125 °C (typical)  
Range  
0.25  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-STPS20L15DPbF VS-STPS20L15D-N3  
UNITS  
Maximum DC reverse voltage  
VR  
15  
15  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle, TC = 85 °C, rectangular waveform  
20  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
700  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
330  
10  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 6 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Revision: 30-Aug-11  
Document Number: 94325  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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