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STPS2060

更新时间： 2024-11-20 22:53:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
3页	46K
描述
POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS2060 数据手册

STPS2060CT

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 10 A

60 V

V_F(max)

0.58 V

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

LOW FORWARD DROP VOLTAGE

LOW CAPACITANCE

HIGH REVERSE AVALANCHE SURGE

CAPABILITY

DESCRIPTION

High voltage dual Schottky rectifier suited to

Switch Mode Power Supplies and other Power

Converters.

TO-220AB

Packaged in TO-220AB, this device is intended for

use in medium voltage operation, and particularly,

in high frequency circuitries where low switching

losses are required.

ABSOLUTE R ATINGS (limiting values)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

I_F(RMS)RMS forward current

Per diode

I_F(AV)

Average forward current

Tcase = 120°C Per diode

V_R= 60V

Per device

Per diode

= 0.5

I_FSM

I_RRM

I_RSM

Surge non repetitive forward

current

tp = 10 ms

Sinusoidal

200

Repetitive peak

reverse current

tp = 2 s

F = 1kHz

Non repetitive peak reverse

current

tp = 100 s

T_stg

Storage temperature range

- 65 to + 150

150

Maximum junction temperature

V/ s

dV/dt

Critical rate of rise of reverse voltage

10000

July 1998 - Ed : 1C

1/3

12 3

中文翻译

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