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STPS2060 PDF预览

STPS2060

更新时间: 2024-02-11 12:40:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
3页 46K
描述
POWER SCHOTTKY RECTIFIER

STPS2060 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.43
Is Samacsys:N其他特性:LOW CAPACITANCE, LOW NOISE
应用:HIGH VOLTAGE POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.67 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V最大反向电流:33000 µA
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS2060 数据手册

 浏览型号STPS2060的Datasheet PDF文件第2页浏览型号STPS2060的Datasheet PDF文件第3页 
STPS2060CT  
®
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 10 A  
60 V  
A1  
K
VF (max)  
0.58 V  
A2  
FEATURES AND BENEFITS  
NEGLIGIBLE SWITCHING LOSSES  
LOW FORWARD DROP VOLTAGE  
LOW CAPACITANCE  
HIGH REVERSE AVALANCHE SURGE  
CAPABILITY  
A2  
K
A1  
DESCRIPTION  
High voltage dual Schottky rectifier suited to  
Switch Mode Power Supplies and other Power  
Converters.  
TO-220AB  
Packaged in TO-220AB, this device is intended for  
use in medium voltage operation, and particularly,  
in high frequency circuitries where low switching  
losses are required.  
ABSOLUTE R ATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
60  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
Per diode  
30  
A
IF(AV)  
Average forward current  
Tcase = 120°C Per diode  
10  
20  
A
VR = 60V  
Per device  
Per diode  
Per diode  
Per diode  
δ
= 0.5  
IFSM  
IRRM  
IRSM  
Surge non repetitive forward  
current  
tp = 10 ms  
Sinusoidal  
200  
1
A
A
A
µ
Repetitive peak  
reverse current  
tp = 2 s  
F = 1kHz  
µ
Non repetitive peak reverse  
current  
tp = 100 s  
1
°
C
Tstg  
Tj  
Storage temperature range  
- 65 to + 150  
150  
Maximum junction temperature  
µ
V/ s  
dV/dt  
Critical rate of rise of reverse voltage  
10000  
July 1998 - Ed : 1C  
1/3  

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