STPS16H100C

更新时间： 2024-11-19 03:06:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压高电压电源
页数	文件大小	规格书
7页	113K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS16H100C 数据手册

STPS16H100CT/CG/CFP/CR

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 8 A

100 V

Tj (max)

V_F(max)

175 °C

0.64 V

FEATURES AND BENEFITS

■

NEGLIGIBLE SWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE DROP

D²PAK

STPS16H100CG

TO-220AB

STPS16H100CT

■

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifier designed for

high frequency miniature Switch Mode Power

Supplies such as adaptators and on board

DC/DC converters.

I²PAK

STPS16H100CR

TO-220FPAB

STPS16H100CFP

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Value

100

Unit

Repetitive peak reverse voltage

RMS forward current

I_F(RMS)

I_F(AV)

Average forward

current δ = 0.5

TO-220AB

Tc = 165°C Per diode

D²PAK / I²PAK

TO-220FPAB

Tc = 150°C Per device

tp = 10 ms sinusoidal

tp = 2 µs square F = 1kHz

tp = 100 µs square

200

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 1µs Tj = 25°C

8700

-65 to+175 °C

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

175

°C

dV/dt

10000

V/µs

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 2A

1/7

12 3 4 5 6 7

中文翻译

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