STPS1L30

更新时间： 2024-09-30 22:10:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
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描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS1L30 数据手册

STPS1L30

LOW DROP POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

I_F(AV)

V_RRM

1 A

30 V

T_j(max)

V_F(max)

150°C

0.3 V

FEATURES AND BENEFITS

SMA

SMB

■

Very low forward voltage drop for less power

dissipation

(JEDEC DO-214AC)

STPS1L30A

(JEDEC DO-214AA)

STPS1L30U

■

Optimized conduction/reverse losses trade-off

which means the highest yield in the

applications

■

Surface mount miniature packages

Avalanche capability specified

Table 2: Order Codes

Part Number

DESCRIPTION

Marking

GB3

G23

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC con-

verters, freewheel diode and integrated circuit

latch up protection.

STPS1L30A

STPS1L30U

Packaged in SMA and SMB, this device is espe-

cially intended for use in parallel with MOSFETs in

synchronous rectification.

Table 3: Absolute Ratings (limiting values)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

Unit

I_F(RMS)

I_F(AV)

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

RMS forward voltage

T_L= 135°C δ = 0.5

tp = 10ms sinusoidal

tp = 2µs F = 1kHz square

tp = 100µs square

Average forward current

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 1µs Tj = 25°C

1500

°C

V/µs

-65 to + 150

150

T_j

Maximum operating junction temperature *

dV/dt Critical rate of rise of reverse voltage

10000

dPtot

* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink

dTj Rth(j – a)

August 2004

REV. 6

1/7

12 3 4 5 6 7

中文翻译

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