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STPS1L30MF PDF预览

STPS1L30MF

更新时间: 2024-11-19 04:10:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管光电二极管
页数 文件大小 规格书
7页 92K
描述
Low drop power Schottky rectifier in flat package

STPS1L30MF 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-222AA包装说明:ROHS COMPLIANT, ST MITE PACKAGE-2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:6 weeks风险等级:1.31
其他特性:FREE WHEELING DIODE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.34 V
JEDEC-95代码:DO-222AAJESD-30 代码:R-PDSO-F2
JESD-609代码:e3最大非重复峰值正向电流:50 A
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

STPS1L30MF 数据手册

 浏览型号STPS1L30MF的Datasheet PDF文件第2页浏览型号STPS1L30MF的Datasheet PDF文件第3页浏览型号STPS1L30MF的Datasheet PDF文件第4页浏览型号STPS1L30MF的Datasheet PDF文件第5页浏览型号STPS1L30MF的Datasheet PDF文件第6页浏览型号STPS1L30MF的Datasheet PDF文件第7页 
STPS1L30MF  
Low drop power Schottky rectifier in flat package  
Main product characteristics  
A
IF(AV)  
VRRM  
1 A  
30 V  
K
Tj (max)  
VF (max)  
150° C  
0.39 V  
STmite flat  
(DO222-AA)  
Features and benefits  
Very low profile package: 0.85 mm  
Description  
Backward compatible with standard STmite  
Single Schottky rectifier suited for switch mode  
power supplies and high frequency DC to DC  
converters.  
footprint  
Very small conduction losses  
Negligible switching losses  
Extremely fast switching  
Packaged in STmite flat, this device is intended  
for use in very low voltage, high frequency  
inverters, free wheeling and polarity protection  
applications. Due to the very small size of the  
package this device fits battery powered  
equipment (cellular, notebook, PDA’s, printers) as  
well as chargers and PCMCIA cards.  
Low forward voltage drop for higher efficiency  
and extended battery life  
Low thermal resistance  
Avalanche capability specified  
Order Code  
Part number  
Marking  
STPS1L30MF  
F1L3  
Table 1.  
Symbol  
Absolute ratings (limiting values)  
Parameter  
Value  
Unit  
VRRM  
IF(RMS)  
IF(AV)  
IFSM  
PARM  
Tstg  
Repetitive peak reverse voltage  
RMS forward voltage  
30  
V
A
2
1
Average forward current  
Tc = 140° C δ = 0.5  
tp = 10 ms sinusoidal  
tp = 1 µs Tj = 25° C  
A
Surge non repetitive forward current  
Repetitive peak avalanche power  
Storage temperature range  
50  
A
1200  
-65 to + 150  
150  
W
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature(1)  
dV/dt  
Critical rate of rise of reverse voltage (rated VR, Tj = 25° C)  
10000  
dPtot  
dTj  
1
---------------  
-------------------------  
1.  
<
condition to avoid thermal runaway for a diode on its own heatsink  
Rth(j a)  
August 2006  
Rev 1  
1/7  
www.st.com  

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