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STPS1L30UPBF PDF预览

STPS1L30UPBF

更新时间: 2024-11-19 06:14:51
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管
页数 文件大小 规格书
5页 92K
描述
Schottky Rectifier, 1.0 A

STPS1L30UPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.3Is Samacsys:N
其他特性:HIGH RELIABILITY, FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.47 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
最大非重复峰值正向电流:360 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS1L30UPBF 数据手册

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STPS1L30UPbF  
Vishay High Power Products  
Schottky Rectifier, 1.0 A  
FEATURES  
• Small foot print, surface mountable  
• Very low forward voltage drop  
• High frequency operation  
RoHS  
COMPLIANT  
• Guard ring for enhanced ruggedness and long term  
reliability  
Cathode  
Anode  
SMB  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
IF(AV)  
1.0 A  
30 V  
15 mA at 125 °C  
The STPS1L30UPbF surface mount Schottky rectifier  
has been designed for applications requiring low  
forward drop and small foot prints on PC board. Typical  
applications are in disk drives, switching power supplies,  
converters, freewheeling diodes, battery charging, and  
reverse battery protection.  
VR  
IRM  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.0  
UNITS  
Rectangular waveform  
A
V
30  
tp = 5 ms sine  
1.0 Apk, TJ = 125 °C  
Range  
360  
A
VF  
0.30  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
STPS1L30UPbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
30  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TL = 106 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
1.0  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
360  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 6 mH  
75  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
3.0  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 94324  
Revision: 15-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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