Datasheet > STPS1L20MF

STPS1L20MF

更新时间： 2024-11-19 04:10:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
7页	92K
描述
Low drop power Schottky rectifier in flat package

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STPS1L20MF 数据手册

STPS1L20MF

Low drop power Schottky rectifier in flat package

Main product characteristics

I_F(AV)

V_RRM

1 A

20 V

T_j(max)

V_F(max)

150° C

0.37 V

STmite flat

(DO222-AA)

Features and benefits

■ Very low profile package: 0.85 mm

Description

■ Backward compatible with standard STmite

Single Schottky rectifier suited for switch mode

power supplies and high frequency DC to DC

converters.

footprint

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

Packaged in STmite flat, this device is intended

for use in low voltage, high frequency inverters,

free wheeling and polarity protection applications.

Due to the very small size of the package this

device fits battery powered equipment (cellular,

notebook, PDA’s, printers) as well as chargers

and PCMCIA cards.

■ Low forward voltage drop for higher efficiency

and extended battery life

■ Low thermal resistance

■ Avalanche capability specified

Order Code

Part number

Marking

STPS1L20MF

F1L2

Table 1.

Symbol

Absolute ratings (limiting values)

Parameter

Value

Unit

V_RRM

I_F(RMS)

I_F(AV)

I_FSM

P_ARM

T_stg

Repetitive peak reverse voltage

RMS forward voltage

Average forward current

T_c= 140° C δ = 0.5

t_p= 10 ms sinusoidal

t_p= 1 µs T_j= 25° C

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range

1400

-65 to + 150

150

°C

V/µs

T_j

Maximum operating junction temperature⁽¹⁾

dV/dt

Critical rate of rise of reverse voltage (rated V_R, T_j= 25° C)

10000

dPtot

dTj

---------------

-------------------------

condition to avoid thermal runaway for a diode on its own heatsink

Rev 1

Rth(j – a)

August 2006

1/7

www.st.com

12 3 4 5 6 7

中文翻译

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STPS1L20MF 替代型号

型号	品牌	替代类型	描述	数据表
STPS120MF	STMICROELECTRONICS	类似代替	Power Schottky rectifier in flat package

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