Datasheet > STL13N65M2

STL13N65M2

更新时间： 2024-11-30 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	636K
描述
N沟道650 V、0.365 Ohm典型值、6.5 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

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STL13N65M2 数据手册

STL13N65M2

N-channel 650 V, 0.365 Ω typ., 6.5 A MDmesh™ M2

Power MOSFET in a PowerFLAT™ 5x6 HV package

Datasheet

−

production data

Features

Order code

V_DS

R_DS(on)max

I_D

STL13N65M2

650 V

0.475 Ω

6.5 A

• Extremely low gate charge

• Excellent output capacitance (C_OSS) profile

• 100% avalanche tested

• Zener-protected

PowerFLAT™ 5x6 HV

Applications

• Switching applications

Figure 1. Internal schematic diagram

Description

D(5, 6, 7, 8)

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics, rendering

it suitable for the most demanding high efficiency

converters.

G(4)

Top View

S(1, 2, 3)

AM15540v2

Table 1. Device summary

Order code

STL13N65M2

Marking

13N65M2

Package

Packaging

PowerFLAT™ 5x6 HV

Tape and reel

December 2014

DocID027319 Rev 1

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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