Datasheet > STL18N60M2

STL18N60M2

更新时间： 2023-12-20 18:45:48

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	900K
描述
N沟道600 V、0.278 Ohm典型值、9 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

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STL18N60M2 数据手册

STL18N60M2

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh™ M2

Power MOSFET in a PowerFLAT™ 5x6 HV package

Datasheet - production data

Features

Order code

V_DS@ T_Jmax

R_DS(on)max.

I_D

STL18N60M2

650 V

0.308 Ω

9 A



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

Applications

PowerFLAT™ 5x6 HV



Switching applications

Description

Figure 1: Internal schematic diagram

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

D(5, 6, 7, 8)

G(4)

Top View

S(1, 2, 3)

Table 1: Device summary

Package

Order code

STL18N60M2

Marking

Packing

18N60M2

PowerFLAT™ 5x6 HV

Tape and reel

August 2017

DocID026517 Rev 2

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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