Datasheet > STL190N4F7AG

STL190N4F7AG

更新时间： 2023-12-20 18:44:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	974K
描述
汽车级N沟道40 V、1.68 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

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STL190N4F7AG 数据手册

STL190N4F7AG

Automotive-grade N-channel 40 V, 1.68 mΩ typ., 120 A

STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max

I_D

STL190N4F7AG

40 V

2.00 mΩ

120 A



Designed for automotive applications and

AEC-Q101 qualified



Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Wettable flank package

Applications



Switching applications

Description

Figure 1: Internal schematic diagram

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

190N4F7

Package

Packaging

STL190N4F7AG

PowerFLAT™ 5x6

Tape and reel

June 2016

DocID028792 Rev 2

1/14

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...14

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