Datasheet > STL16N60M6

STL16N60M6

更新时间： 2023-12-20 18:44:37

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道600 V、0.29 Ohm典型值、12 A MDmesh M6功率MOSFET，PowerFLAT 5x6 HV封装

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STL16N60M6 数据手册

STL16N60M6

N-channel 600 V, 0.30 Ω typ., 8 A MDmesh™ M6

Power MOSFET in a PowerFLAT™ 5x6 HV package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STL16N60M6

600 V

0.35 Ω

8 A



Reduced switching losses

Lower R_DS(on)x area vs previous generation

Low gate input resistance

100% avalanche tested

PowerFLAT™ 5x6 HV

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

D(5, 6, 7, 8)

Description

The new MDmesh™ M6 technology incorporates

the most recent advancements to the well-known

and consolidated MDmesh family of SJ

MOSFETs. STMicroelectronics builds on the

previous generation of MDmesh devices through

its new M6 technology, which combines excellent

R_DS(on)* area improvement with one of the most

effective switching behaviors available, as well as

a user-friendly experience for maximum end-

application efficiency.

G(4)

Top View

S(1, 2, 3)

Table 1: Device summary

Package

Order code

STL16N60M6

Marking

Packing

16N60M6

PowerFLAT™ 5x6 HV

Tape and reel

April 2017

DocID030476 Rev 1

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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