Datasheet > STL180N6F7

STL180N6F7

更新时间： 2023-12-20 18:46:29

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	822K
描述
N沟道60 V、1.9 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

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STL180N6F7 数据手册

STL180N6F7

Datasheet

N-channel 60 V, 1.9 mΩ typ., 120 A, STripFET™ F7 Power MOSFET

in a PowerFLAT™ 5x6 package

Features

DS(on)

max.

Order code

STL180N6F7

60 V

2.4 mΩ

120 A

•

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Applications

D(5, 6, 7, 8)

•

Switching applications

G(4)

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an

enhanced trench gate structure that results in very low on-state resistance, while also

reducing internal capacitance and gate charge for faster and more efficient switching.

Top View

S(1, 2, 3)

AM15540v2

Product status link

STL180N6F7

Product summary

Order code

STL180N6F7

Marking

Package

Packing

180N6F7

PowerFLAT™ 5x6

Tape and reel

DS12377 - Rev 2 - December 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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