Datasheet > STL13NM60N

STL13NM60N

更新时间： 2024-11-27 09:00:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	831K
描述
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT? (8x8) HV MDmesh? II Power MOSFET

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STL13NM60N 数据手册

STL13NM60N

N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV

MDmesh™ II Power MOSFET

Features

V_DSS

T_Jmax

R_DS(on)

max

Order code

I_D

"OTTOM VIEW

3ꢀꢁꢂ

< 0.385 Ω 10 A ⁽¹⁾

'ꢀꢃꢂ

STL13NM60N

650 V

$ꢀꢄꢂ

1. The value is rated according to R_thj-case

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

0OWER&,!4ꢀꢅXꢅꢂ (6

Application

Switching applications

Figure 1.

Internal schematic diagram

Description

This device is a N-channel Power MOSFETs

made using the second generation of MDmesh™

technology. This revolutionary transistor

associates a new vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

$ꢀꢄꢂ

'ꢀꢃꢂ

3ꢀꢁꢂ

!-ꢆꢃꢇꢈꢉVꢃ

Table 1.

Order code

STL13NM60N

Device summary

Marking

Package

Packaging

Tape and reel

13NM60N

PowerFLAT™ (8x8) HV

May 2011

Doc ID 018870 Rev 1

1/14

www.st.com

12 3 4 5 6 7...14

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