Datasheet > STL15N60M2-EP

STL15N60M2-EP

更新时间： 2023-12-20 18:46:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	611K
描述
N沟道600 V、0.389 Ohm典型值、7 A MDmesh M2 EP功率MOSFET，PowerFLAT 5x6 HV封装

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STL15N60M2-EP 数据手册

STL15N60M2-EP

Datasheet

N-channel 600 V, 0.390 Ω typ., 7 A MDmesh™ M2 EP

Power MOSFET in a PowerFLAT™ 5x6 HV package

Features

@ T

max.

TOT

Order code

Jmax

DS(on)

STL15N60M2-EP

650 V

0.418 Ω

7 A

55 W

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

Very low turn-off switching losses

100% avalanche tested

PowerFLAT™ 5x6 HV

Zener-protected

D(5, 6, 7, 8)

Applications

G(4)

•

Switching applications

Tailored for very high frequency converters (f > 150 kHz)

Description

Top View

S(1, 2, 3)

This device is an N-channel Power MOSFET developed using MDmesh™

AM15540v1

M2 enhanced performance (EP) technology. Thanks to its strip layout and an

improved vertical structure, the device exhibits low on-resistance, optimized switching

characteristics with very low turn-off switching losses, rendering it suitable for the

most demanding very high frequency converters.

Product status

STL15N60M2-EP

Product summary

Order code

Marking

STL15N60M2-EP

15N60M2E

PowerFLAT™ 5x6 HV

Tape and Reel

Package

Packing

DS11101 - Rev 3 - May 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...16

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