Datasheet > STG3699B_07

STG3699B_07

更新时间： 2024-11-29 04:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关光电二极管
页数	文件大小	规格书
18页	260K
描述
Low voltage 0.5 ヘ max, quad SPDT switch with break-before-make feature

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STG3699B_07 数据手册

STG3699B

Low voltage 0.5 Ω max, quad SPDT switch

with break-before-make feature

Features

■ High speed:

– t = 1.5 ns (typ.) at V = 3.0 V

– t = 1.5 ns (typ.) at V = 2.3 V

■ Ultra low power dissipation:

– I = 0.2 μA (max.) at T = 85°C

■ Low ON resistance V = 0 V:

– R = 0.50 Ω (max. T = 25°C) at

= 4.3 V

QFN16L (2.6 x 1.8 mm)

– R = 0.55 Ω (max. T = 25°C) at

= 3.0 V

– R = 0.55 Ω (max. T = 25°C) at

It offers very low ON resistance (R < 0.5 Ω) at

= 2.7 V

= 3.0 V. The nIN inputs are provided to

■ Wide operating voltage range:

control the independent channel switches nS1

and nS2. The switches nS1 are ON (connected to

common ports Dn) when the nIN input is held high

and OFF (state of high impedance exists between

the two ports) when nIN is held low. The switches

nS2 are ON (connected to common ports Dn)

when the nIN input is held low and OFF (state of

high impedance exists between the two ports)

when IN is held high. Additional key features are

fast switching speed, break-before-make delay

time and ultra low power consumption. All inputs

and outputs are equipped with protection circuits

against static discharge, giving them ESD and

excess transient voltage immunity.

– V (OPR) = 1.65 to 4.3 V single supply

■ 4.3 V tolerant and 1.8 V compatible thresholds

on digital control input at V = 2.3 to 3.0 V

■ Latch-up performance exceed 300 mA

(JESD 17)

■ ESD performance (analog chan. vs. GND):

HBM > 2 kV (MIL STD 883 method 3015)

Description

The STG3699B is a high-speed CMOS low

voltage quad analog SPDT (single-pole double-

throw) switch or 2:1 multiplexer/demultiplexer

The STG3699B is available in the commercial

temperature range of -40 to 125°C in a QFN16L,

2.6 x 1.8 mm package.

switch fabricated using silicon gate C MOS

technology. Designed to operate from 1.65 to

4.3 V, this device is ideal for portable applications.

Table 1.

Order code

STG3699BVTR

Device summary

Temperature range

Package

Packaging

–40 to 125°C

QFN16L (2.6 x 1.8 mm)

Tape and reel

September 2007

Rev 6

1/18

www.st.com

12 3 4 5 6 7...18

中文翻译

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与STG3699B_07相关器件

型号	品牌	获取价格	描述	数据表
STG3699BVTR	STMICROELECTRONICS	获取价格	Low Voltage 0.5ohm Max, Quad SPDT Switch with break-before-make feature
STG3699QTR	STMICROELECTRONICS	获取价格	LOW VOLTAGE 0.5з MAX QUAD SPDT SWITCH WITH BR
STG3699TTR	STMICROELECTRONICS	获取价格	LOW VOLTAGE 0.5з MAX QUAD SPDT SWITCH WITH BR
STG3820	STMICROELECTRONICS	获取价格	Low voltage high bandwidth quad DPDT switch
STG3820BJR	STMICROELECTRONICS	获取价格	Low voltage high bandwidth quad DPDT switch
STG3856	STMICROELECTRONICS	获取价格	Low Voltage 1.0? Max Dual SP3T Switch With Break Before Make Feature
STG3856QTR	STMICROELECTRONICS	获取价格	Low voltage 1.0Ω max dual SP3T switch with break-before-make feature
STG3P2M10N60B	STMICROELECTRONICS	获取价格	1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP 2 module
STG3P3M25K120	STMICROELECTRONICS	获取价格	50A, 1200V, N-CHANNEL IGBT, ROHS COMPLIANT, SEMITOP3, 20 PIN
STG3P3M25N120	STMICROELECTRONICS	获取价格	50A, 1200V, N-CHANNEL IGBT, ROHS COMPLIANT, SEMITOP3, 20 PIN

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