是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.75 | Is Samacsys: | N |
模拟集成电路 - 其他类型: | SP3T | JESD-30 代码: | R-PQCC-N12 |
功能数量: | 2 | 端子数量: | 12 |
最大通态电阻 (Ron): | 4.8 Ω | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 输出: | SEPARATE OUTPUT |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCN |
封装等效代码: | LCC12,.05X.08,16 | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 电源: | 1.4/4.3 V |
认证状态: | Not Qualified | 子类别: | Multiplexer or Switches |
表面贴装: | YES | 最长接通时间: | 50 ns |
切换: | BREAK-BEFORE-MAKE | 温度等级: | INDUSTRIAL |
端子形式: | NO LEAD | 端子节距: | 0.4 mm |
端子位置: | QUAD | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STG3856QTR | STMICROELECTRONICS |
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Low voltage 1.0Ω max dual SP3T switch with break-before-make feature | |
STG3P2M10N60B | STMICROELECTRONICS |
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1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP 2 module | |
STG3P3M25K120 | STMICROELECTRONICS |
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50A, 1200V, N-CHANNEL IGBT, ROHS COMPLIANT, SEMITOP3, 20 PIN | |
STG3P3M25N120 | STMICROELECTRONICS |
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50A, 1200V, N-CHANNEL IGBT, ROHS COMPLIANT, SEMITOP3, 20 PIN | |
STG3P3M25N60 | STMICROELECTRONICS |
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3 Phase inverter IGBT - SEMITOP㈢3 module | |
STG40M120F3D7 | STMICROELECTRONICS |
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1200 V、40 A沟槽栅场截止M系列低损耗IGBT晶片,D7封装 | |
STG4158 | STMICROELECTRONICS |
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Low voltage 0.6 ヘ typ single SPDT switch with | |
STG4158BJR | STMICROELECTRONICS |
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Low voltage 0.6 ヘ typ single SPDT switch with | |
STG4159 | STMICROELECTRONICS |
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Low voltage 0.3ヘ max single SPDT switch with | |
STG4159BJR | STMICROELECTRONICS |
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Low voltage 0.3ヘ max single SPDT switch with |