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STG3820BJR PDF预览

STG3820BJR

更新时间： 2024-11-30 01:19:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 光电二极管输出元件
页数 文件大小 规格书
20页 485K
描述
Low voltage high bandwidth quad DPDT switch

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STG3820BJR 技术参数

生命周期：Active零件包装代码：BGA
包装说明：2 X 2.40 MM, 0.625 MM HEIGHT, 0.40 MM PITCH, ROHS COMPLIANT, FLIP-CHIP-30针数：30
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：24 weeks
风险等级：1.56Is Samacsys：N
模拟集成电路 - 其他类型：DPDTJESD-30 代码：R-PBGA-B30
功能数量：4端子数量：30
最大通态电阻 (Ron)：7.3 Ω最高工作温度：85 °C
最低工作温度：-40 °C输出：SEPARATE OUTPUT
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA30,5X6,16封装形状：RECTANGULAR
封装形式：GRID ARRAY峰值回流温度（摄氏度）：NOT SPECIFIED
电源：1.65/4.3 V认证状态：Not Qualified
子类别：Multiplexer or Switches表面贴装：YES
最长接通时间：23 ns切换：BREAK-BEFORE-MAKE
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.4 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

STG3820BJR 数据手册

 浏览型号STG3820BJR的Datasheet PDF文件第2页浏览型号STG3820BJR的Datasheet PDF文件第3页浏览型号STG3820BJR的Datasheet PDF文件第4页浏览型号STG3820BJR的Datasheet PDF文件第5页浏览型号STG3820BJR的Datasheet PDF文件第6页浏览型号STG3820BJR的Datasheet PDF文件第7页 
STG3820  
Low voltage high bandwidth quad DPDT switch  
Datasheet - production data  
Description  
The STG3820 device is a high-speed CMOS low  
voltage quad analog DPDT (dual pole dual throw)  
switch or 2:1 multiplexer/demultiplexer switch  
2
fabricated in silicon gate C MOS technology. It is  
designed to operate from 1.65 V to 4.3 V, making  
this device ideal for portable applications.  
Flip Chip 30  
(2.0 x 2.4 mm)  
The SELm-n input is provided to control the  
switches. The switches nS1 and mS1 are ON  
(connected to common ports Dn and Dm  
respectively) when the SELm-n input is held high  
and OFF (high impedance state exists between  
the two ports) when the SELm-n is held low. The  
switches nS2 and mS2 are ON (connected to  
common port Dn and Dm respectively) when the  
SELm-n input is held low and OFF (high  
Features  
Ultralow power dissipation  
– I = 1 µA (max.) at T = 85 °C  
CC  
A
impedance state exists between the two ports)  
when the SELm-n is held high.  
Low “ON” resistance  
– R = 5.4 (T = 25 °C) at V = 4.3 V  
ON  
A
CC  
The STG3820 device has an integrated fail safe  
function to withstand overvoltage condition when  
the device is powered off. Additional key features  
are fast switching speed, break-before-make-  
delay time and ultralow power consumption. All  
inputs and outputs are equipped with protection  
circuits against static discharge, giving them ESD  
immunity and transient excess voltage.  
– R = 6.6 (T = 25 °C) at V = 3.0 V  
ON  
A
CC  
Wide operating voltage range  
– V (OPR.) = 1.65 V to 4.3 V  
CC  
4.3 V tolerant and 1.8 V compatible threshold  
on digital control input at V = 2.3 V to 3.0 V  
CC  
4 select pins controlling 2 switches each  
Typical bandwidth (-3 dB) at 800 MHz on all  
channels  
Table 1. Device summary  
USB (2.0) high speed (480 Mbps) signal  
switching compliant  
Order code  
Package  
Packing  
Integrated fail safe function  
Flip Chip 30  
(2.0 x 2.4 mm)  
STG3820BJR  
Tape and reel  
Latch-up performance exceeds 100 mA per  
JESD 78, Class II  
ESD performance exceeds JESD22  
2000-V human body model (A114-A)  
Applications  
Mobile phones  
August 2013  
DocID15992 Rev 4  
1/20  
This is information on a product in full production.  
www.st.com  
 
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