5秒后页面跳转
STF7NM60N PDF预览

STF7NM60N

更新时间: 2024-02-19 19:12:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
17页 885K
描述
N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

STF7NM60N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.68Is Samacsys:N
雪崩能效等级(Eas):119 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):20 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STF7NM60N 数据手册

 浏览型号STF7NM60N的Datasheet PDF文件第2页浏览型号STF7NM60N的Datasheet PDF文件第3页浏览型号STF7NM60N的Datasheet PDF文件第4页浏览型号STF7NM60N的Datasheet PDF文件第5页浏览型号STF7NM60N的Datasheet PDF文件第6页浏览型号STF7NM60N的Datasheet PDF文件第7页 
STD7NM60N, STF7NM60N  
STP7NM60N, STU7NM60N  
N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK  
second generation MDmesh™ Power MOSFET  
Features  
VDSS @  
TJmax  
RDS(on)  
max.  
Order codes  
ID  
3
2
3
2
1
1
STD7NM60N  
STF7NM60N  
STP7NM60N  
STU7NM60N  
TO-220  
IPAK  
650 V  
< 0.9 Ω  
5 A  
3
100% avalanche tested  
1
3
2
1
Low input capacitance and gate charge  
Low gate input resistance  
DPAK  
TO-220FP  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
$ꢅꢆꢇ  
These devices are N-channel Power MOSFETs  
realized using the second generation of  
TM  
MDmesh technology. It applies the benefits of  
the multiple drain process to STMicroelectronics’  
well-known PowerMESH™ horizontal layout  
structure. The resulting product offers improved  
on-resistance, low gate charge, high dv/dt  
'ꢅꢁꢇ  
capability and excellent avalanche characteristics.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD7NM60N  
STF7NM60N  
STP7NM60N  
STU7NM60N  
Tape and reel  
Tube  
TO-220FP  
TO-220  
IPAK  
7NM60N  
Tube  
Tube  
November 2010  
Doc ID 16472 Rev 4  
1/17  
www.st.com  
17  

STF7NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STF10NM60N STMICROELECTRONICS

功能相似

N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

与STF7NM60N相关器件

型号 品牌 获取价格 描述 数据表
STF7NM80 STMICROELECTRONICS

获取价格

N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220
STF8 ETC

获取价格

SOCKET REAR MT FOR TA TIMER
STF8045AF ETC

获取价格

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 100A I(C)
STF8045AV ETC

获取价格

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 100A I(C)
STF8045DF ETC

获取价格

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 100A I(C)
STF8045DV ETC

获取价格

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 100A I(C)
STF817 STMICROELECTRONICS

获取价格

PNP MEDIUM POWER TRANSISTORS
STF817A STMICROELECTRONICS

获取价格

PNP MEDIUM POWER TRANSISTOR
STF8220 SAMHOP

获取价格

Dual N-Channel E nhancement Mode F ield E ffect Transistor
STF826 STMICROELECTRONICS

获取价格

3A, 30V, PNP, Si, POWER TRANSISTOR, ROHS COMPLIANT PACKAGE-4