Datasheet > STF8N80K5

STF8N80K5

更新时间： 2023-12-20 18:44:42

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	1125K
描述
N沟道800 V、0.8 Ohm典型值、6 A MDmesh K5功率MOSFET，TO-220FP封装

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STF8N80K5 数据手册

STF8N80K5, STFI8N80K5

N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5

Power MOSFET in TO-220FP and I PAKFP packages

Datasheet

−

production data

Features

Order codes

V_DSR_DS(on)max.

800 V 0.95 Ω

I_D

P_TOT

STF8N80K5

STFI8N80K5

6 A

25 W

• Industry’s lowest R_DS(on)x area

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

I²PAKFP (TO-281)

TO-220FP

• 100% avalanche tested

• Zener-protected

Applications

Figure 1. Internal schematic diagram

• Switching applications

D(2)

Description

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

G(1)

S(3)

AM01476v1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STF8N80K5

STFI8N80K5

TO-220FP

8N80K5

Tube

I²PAKFP (TO-281)

October 2014

DocID024419 Rev 3

1/15

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...15

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