Datasheet > STF9N60M2

STF9N60M2

更新时间： 2023-12-20 18:44:09

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	879K
描述
N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，TO-220FP封装

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STF9N60M2 数据手册

STF9N60M2,

STFI9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Q_g

Power MOSFETs in TO-220FP and I²PAKFP packages

Datasheet

production data

Features

V_DS

T_Jmax

R_DS(on)

max

Order codes

I_D

STF9N60M2

STFI9N60M2

650 V

0.78 Ω

5.5 A

• Extremely low gate charge

• Lower R_DS(on)x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

TO-220FP

I²PAKFP (TO-281)

• Zener-protected

Applications

• Switching applications

Figure 1. Internal schematic diagram

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q_g. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM15572v1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STF9N60M2

STFI9N60M2

TO-220FP

I²PAKFP

9N60M2

Tube

March 2014

DocID024728 Rev 2

1/15

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...15

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