Datasheet > STF8220

STF8220

更新时间： 2024-09-26 06:14:39

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
7页	676K
描述
Dual N-Channel E nhancement Mode F ield E ffect Transistor

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STF8220 数据手册

S T F 8220

S amHop Microelectronics C orp.

Oct.23 2006 ver1.1

Dual N-C hannel E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

20 @ VG S = 4.0V

28 @ VG S = 2.5V

20V

S urface Mount P ackage.

E S D P rotected.

D1/D2

DFN 2X3

(Bottom view)

P IN 1

ABS OLUTE MAXIMUM R ATING S (T

=25 C unless otherwise noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous @ T

=25 C

-P ulsed

Drain-S ource Diode Forward C urrent ^a

Maximum P ower Dissipation ^a

1.7

1.56

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 150

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-Ambient ^a

J A

12 3 4 5 6 7

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