Datasheet > 晶体管 > 功率场效应晶体管> STD110N02RT4G

STD110N02RT4G

更新时间： 2024-09-14 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管功率场效应晶体管
页数	文件大小	规格书
8页	67K
描述
单 N 沟道，功率 MOSFET，24V，110A，4.6mΩ

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中文翻译

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数据手册

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STD110N02RT4G 数据手册

NTD110N02R

Power MOSFET

24 V, 110 A, N−Channel DPAK

Features

• Planar HD3e Process for Fast Switching Performance

• Low R

to Minimize Conduction Loss

DS(on)

http://onsemi.com

• Low C to Minimize Driver Loss

iss

• Low Gate Charge

TYP

I MAX

(BR)DSS

DS(on)

• Optimized for High Side Switching Requirements in

High−Efficiency DC−DC Converters

24 V

4.1 mW @ 10 V

110 A

• Pb−Free Packages are Available

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

DSS

Gate−to−Source Voltage − Continuous

Thermal Resistance − Junction−to−Case

Total Power Dissipation @ T = 25°C

±20

1.35

110

°C/W

Drain Current

− Continuous @ T = 25°C, Chip

110

− Continuous @ T = 25°C,

Limited by Package

− Continuous @ T = 25°C,

Limited by Wires

− Single Pulse (t = 10 ms)

110

Thermal Resistance

− Junction−to−Ambient (Note 1)

2.88

17.5

°C/W

CASE 369D

DPAK

(Straight Lead)

STYLE 2

CASE 369AA

DPAK

(Surface Mount)

STYLE 2

− Total Power Dissipation @ T = 25°C

− Drain Current − Continuous @ T = 25°C

Thermal Resistance

− Junction−to−Ambient (Note 2)

100

1.5

°C/W

− Total Power Dissipation @ T = 25°C

MARKING DIAGRAM

& PIN ASSIGNMENTS

− Drain Current − Continuous @ T = 25°C

12.5

Operating and Storage

Temperature Range

T , T

−55 to

175

°C

stg

Drain

Single Pulse Drain−to−Source Avalanche

120

Energy − Starting T = 25°C

(V = 50 Vdc, V = 10 Vdc,

I = 15.5 Apk, L = 1.0 mH, R = 25 W)

Maximum Lead Temperature for Soldering

260

°C

Purposes, (1/8″ from case for 10 s)

Gate

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Drain

Source

Gate Drain Source

= Year

= Work Week

T110N2 = Device Code

1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.

2. When surface mounted to an FR4 board using the minimum recommended

pad size.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

December, 2004 − Rev. 6

NTD110N02R/D

12 3 4 5 6 7 8

中文翻译

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与STD110N02RT4G相关器件

型号	品牌	获取价格	描述	数据表
STD110N02RT4G-VF01	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，24V，110A，4.6mΩ
STD110NH02L	STMICROELECTRONICS	获取价格	N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFE
STD110NH02L_06	STMICROELECTRONICS	获取价格	N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET
STD110NH02LT4	STMICROELECTRONICS	获取价格	N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET
STD111	ETC	获取价格	STD111\|Data Sheet
STD116	SIRECTIFIER	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD116	SIRECT	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD116GK08	SIRECT	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD116GK08	SIRECTIFIER	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD116GK08B	SIRECTIFIER	获取价格	Thyristor-Diode Modules

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